News

ScIDre GmbH is expanding its OFZ technology portfolio with a new resistive after‑heater unit for HKZ and LKZ systems. The ultra‑compact design achieves an unprecedented 4 mm spacing between the melt zone and the heater coil, minimizing thermal drop‑off and stabilizing the crystallization front. Supporting up to 1100 °C and atmospheres including argon, argon/oxygen, and air at 10 bar, the unit is ideal for oxide materials with demanding thermal requirements. It can be retrofitted into nearly all existing ScIDre OFZ systems and integrates seamlessly into our control software, enabling programmable ramps and precise gradient shaping. The result: higher crystal quality, improved yield, and greater flexibility for advanced OFZ growth.